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Samsung Develops First 60-nm 2Gbit DDR2 DRAM

by Darren

Samsung is cooing about their latest accomplishment in the world of memory. In a world where fast is always better, this development means 20% faster DRAM for the applications that really need it.

Compared with 80-nm 2Gbit DDR2, the 60-nm memory with a speed of 800Mbits per second has an improved DRAM performance of up to 20 percent, according to Samsung. In addition, Samsung said that the production efficiency for the new 2Gbit DDR2 will be enhanced by about 40 percent using the finer 60-nm process technology. The company also claimed that the 2Gbit DDR2 device will provide twice as much storage capacity over existing system memory solutions.

According to Samsung, the 2Gbit DDR2 device cuts in half the number of components used in a 1Gbit-based 8GByte module, which consists of 72 1Gbit chips. The new solution consumes approximately 30 percent less power than a module of the same capacity using 1Gbit chips, Samsung said. Samsung also said it can supply the 2Gbit DDR2 in four types of modules: 8GByte fully buffered, dual inline memory modules (FBDIMM); 8GByte registered, dual inline memory modules (RDIMM); 4GByte unbuffered, dual inline memory modules (UDIMM); and 4GByte small outline, dual inline memory modules (SODIMM).

Now that is some seriously fast DRAM.